检测认证人脉交流通讯录
成都n型碳化硅衬底_鄂尔多斯碳化硅_鄂尔多斯碳化硅晶体_豪麦瑞供_苏州豪麦瑞材料科技有限公司专业从事氧化铝球,氧化锆球,陶瓷精加工,纺织陶瓷抛光加工业务.联系电话：18962527682 网址：www.homraymaterial.cn
碳化硅半导体是新一代宽禁带半导体，它具有热导率高，与GaN晶格失配小等优势，非常适合用作发光二极管，大功率电力电子材料。
采用碳化硅作衬底的LED器件亮度更高、能耗更低、寿命更长、单位芯片面积更小，且在大功率LED方面具有非常大的优势。此外，碳化硅除了用作LED衬底，它还可以制造高耐压、大功率电力电子器件如肖特基二极管（SBD/JBS）、绝缘栅双极型晶体管（IGBT）,晶闸管（GTO）、金属氧化物半导体场效应晶体管（MOSFET）等，用于智能电网、太阳能并网、电动汽车等行业。
从整体上看，碳化硅半导体完整产业链包括：碳化硅原料-晶锭-衬底-外延-芯片-器件-模块。
我们公司进口碳化硅晶圆，为我们的客户提供所需的材料，让客户在这样行业里促进技术的快速扩展。
产品介绍：
n-type SiC Substrate
PRODUCT DESCRIPTIONS
The Materials Business Unit produces a wide assortment of n-type conductive SiC products ranging in wafer diameters up to 150mm. This material is manufactured upon a high-volume platform process that provides our customers the highest degree of material quality, supply assurance and economies of scale.
Part Number
Description
W4NRF0X-0200
4H-SiC, n-type, Research Grade, 100mm, On-Axis, 0.013-2.0 ohm-cm, Standard MPD, 500um Thick, DoubleSided Polish Si Face CMP Epi Ready, Bare Substrate
W4NRF4C-U200
4H-SiC, n-type, Research Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPF4C-U200
4H-SiC, n-type, Production Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NRF4C-B200
4H-SiC, n-type, Research Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick, Double Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPF4C-B200
4H-SiC, n-type, Production Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NRG4C-C1-V200
4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Very Low MPD ≤5/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPG4C-C1-V200
4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Very Low MPD ≤5/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NRG4C-C1-U200
4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPG4C-C1-U200
4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
*C-faced polished wafers and 150mm LBPD substrates available upon request, lead times dependent on volume and requirements
FLAT LENGTH
Linear dimension of the flat measured with ANSI-certified digital calipers on a sample of one wafer per ingot
PRIMARY FLAT
The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane.
PRIMARY FLAT ORIENTATION
The primary flat is the {1010} plane with the flat face parallel to the <1120> direction. Measured with Laue back reflection technique.
SECONDARY FLAT
A flat of shorter length than the primary flat, whose position with respect to the primary flat identifies the face of the wafer. Not applicable to 150mm wafers.
SECONDARY FLAT ORIENTATION
The secondary flat is the {11-20} plane with the flat face parallel to the <1010> direction. Measured with Laue back reflection technique.
MARKING
For silicon-face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. For carbonface-polished material, the silicon face of each individual wafer is laser-marked.
PRODUCT SPECIFICATIONS
100mm Diameter n-type Substrates
Diameter
100.0 mm +0.0/-0.5 mm
Thickness
On-axis
500 μm ± 25 μm
Off-axis
350.0 μm ± 25.0 μm
Dopant
Nitrogen
Primary flat length
32.5 mm ± 2.0 mm
Secondary flat length
18.0 mm ± 2.0 mm
Surface orientation
On-axis
{0001} ± 0.25˚
Off-axis
4.0˚ toward <1120> ± 0.5˚
Surface finish
Back face optical polish, epi-face CMP
Orthogonal misorientation
± 5.0˚
Primary flat orientation
<1120> ± 5.0˚
Secondary flat orientation
90.0˚ CW from primary ± 5.0˚, silicon face up
TTV
≤15 microns, full substrate
Warp
≤45 microns, full substrate
LTV (average, 1 cm2 site)
≤4 microns, full substrate
Edge chips by diffuse lighting
Production-grade
none permitted ≥0.5mm width and depth
Research-grade
qty. 2 ≥1.0 mm width and depth
150mm Diameter n-type Substrates
Diameter
150.0 mm ± 0.25 mm
Thickness
C1 specification
350 μm ± 25 μm
Dopant
Nitrogen
Primary flat length
47.5 mm ± 1.5 mm
Secondary flat length
None
Surface orientation
4.0˚ toward <11-20> ± 0.5˚
Surface finish
Back face optical polish, epi-face CMP
Orthogonal misorientation
± 5.0˚
Primary flat orientation
<11-20> ± 5˚
Secondary flat orientation
N/A
TTV
≤10 μm
Warp
Production-grade
≤40 μm
Research-grade
≤60 μm
LTV (average, 1 cm2 site)
Production-grade
≤2 μm
Research-grade
≤4 μm
Edge chips by diffuse lighting
Production-grade
none permitted ≥0.5mm width and depth
Research-grade
qty. 2 ≥1.0 mm width and depth
苏州豪麦瑞材料科技有限公司简介：苏州豪麦瑞材料科技有限公司是一家专业从事氧化铝、氧化锆产品、开发 制造、销售于一体的企业，企业有国内前列的工艺，专业的技术人员，先进的生产设备和检测手段。我公司生产的产品主要有：工业用各类氧化铝粉包括（蓝宝石长晶用粉，抛光用粉，抛光液用氧化铝粉，片状氧化铝粉……）,研磨用氧化铝球，研磨用氧化锆球，氧化铝陶瓷件，精密氧化铝陶瓷，专业陶瓷精加工服务，纺织陶瓷抛光精加工服务。
我公司产品齐全，被大范围用于研磨、半导体、化工、抛光、制造、纺织等行业。由于我们的产品性能优良，久经耐用，深受广大用户好评。我们将优质的产品与服务奉献客户， 尽我们比较大的努力达到客户的满意。我们希望建立长期的友好合作关系，欢迎广大国内外新老客户来电咨询及来厂考察洽谈!苏州豪麦瑞材料科技有限公司联系方式：
王经理：18962527682
孙经理：18626214311
联系电话：0512-65030678
网址：www.homraymaterial.cn
地址：苏州市工业园区唯华路3号君地商务广场5栋602室
